2N6987U Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6987U
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: 20PIN-LEADLESS
2N6987U Transistor Equivalent Substitute - Cross-Reference Search
2N6987U Datasheet (PDF)
2n6987u.pdf
Product Bulletin JANTX, JANTXV, 2N6987USeptember 1996Surface Mount Quad PNP TransistorType JANTX, JANTXV, 2N6987UFeaturesAbsolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Base Voltage . . . . . . . . . . . . . .
2n6987u 2n6988.pdf
TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices Qualified Level JAN 2N6987 JANTX 2N6988 2N6987U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (4) 60 Vdc VCEO 2N6987* Collector-Base Voltage (4) 60 Vdc VCBO TO- 116 Emitter-Base Voltage (4) 5.0 Vdc VEBO Collector C
2n6987.pdf
Data Sheet No. 2N6987Generic Part Number:Type 2N69872N6987Geometry 0600Polarity PNPREF: MIL-PRF-19500/558Qual Level: JAN - JANSFeatures: An array of four independent PNPsilicon switching transistors. Housed in a cerdip case. Also available in chip form usingthe 0600 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/558 whichSemicoa meet
2n6989u.pdf
Product Bulletin JANTX, JANTXV, 2N6989UJanuary 1996Surface Mount Quad NPN TransistorType JANTX, JANTXV, 2N6989UFeatures Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 VCeramic surface mount packageCollector-Emitter Voltage . . . . . . . . . . . . . .
2n698.pdf
2N698Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 0.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n6989-2n6990.pdf
TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (3) 50 Vdc VCEO Collector-Base Voltage (3) 75 Vdc TO- 116* VCBO Emitter-Base Voltage (3) 6.0 Vdc 2N6
2n6988.pdf
Data Sheet No. 2N6988Generic Part Number:Type 2N69882N6988Geometry 0600Polarity PNPREF: MIL-PRF-19500/558Qual Level: JAN - JANSFeatures: General purpose silicon transistorfor switching and amplifier applica-tions. Housed in a 14-Lead Flat Package. Also available in chip form using the0600 chip geometry. The Min and Max limits shown areper MIL-PRF-1950
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
