2N6678M3A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6678M3A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 175
W
Tensión colector-base (Vcb): 650
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Capacitancia de salida (Cc): 500
pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
TO254AA
2N6678M3A
Datasheet (PDF)
..1. Size:590K semelab
2n6678m3a.pdf
SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A High Voltage, Fast Switching. Hermetic TO-254AA Isolated Metal Package. Ideally suited for PWM Regulators, Power Supplies and Converter Circuits Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 650V VCEX VBE = -1.5V Collector Emitt
8.1. Size:916K no
2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf
The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2
8.2. Size:70K microsemi
2n6676 2n6678 2n6691 2n6693.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VE
8.3. Size:174K aeroflex
2n6676 2n6678.pdf
NPN High Power Silicon Transistors2N6676 & 2N6678Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6676 2N6678 UnitsCollector - Emitter Voltage VCEO 300 400 VdcCollector - Base Voltage VCBO 450 650 VdcCollector - Base Voltage VCBX 450 650 VdcEmitter - Base Voltage VEBO 8.0 VdcBase Current IB 5.
8.4. Size:167K cn sptech
2n6678.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6678DESCRIPTIONHigh Voltage CapabilityFast Switching SpeedLow Saturation VoltageAPPLICATIONSDesigned for high voltage switching applications such as:Off-line power suppliesConverter circuitsPWM regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Volt
8.5. Size:192K inchange semiconductor
2n6678.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2N6678DESCRIPTIONHigh Voltage CapabilityFast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching applications such as:Off-line power suppliesConverter circuitsPWM regulatorsABSOLUTE MAXIM
8.6. Size:131K inchange semiconductor
2n6676 2n6677 2n6678.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : Off-line power supplies Converter circuits Pulse width modulated regulators PINNING (See F
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