2SD2474 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SD2474Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB16121.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.040.

SMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SD2474FeaturesLow collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga

2SB1616TransistorsTransistors2SD2478(SPEC-B426)(94L-1129-D426)301

Power Transistors2SD2479Silicon NPN epitaxial planar typeUnit: mmFor low-frequency amplification7.50.2 4.50.2 Features High forward current transfer ratio hFE0.650.1 0.850.1 Allowing supply with the radial taping 0.8 C 0.8 C1.00.10.70.10.70.11.150.2 Absolute Maximum Ratings Ta = 25C1.150.2Parameter Symbol Rating Unit0.50.1 0.4

UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS FEATURES * Low saturation voltage V= 0.25V(typ) at IC/IB= 3A/0.1A 1* Collector current of 5A is possible TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD2470L-x-T9S-B 2SD2470G-x-T9S-B TO-92SP E C B Tape Box2SD2

2SD2470 TO-92S Transistor (NPN)1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low saturation voltage VCE(sat):0.5V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 8 V IC Collector Current Continuous 5 A PC Collector Power Dissip