2SD2625V9 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

Ordering number : ENN64782SD2627NPN Triple Diffused Planar Silicon Transistor2SD2627Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process).[2SD2627] Adoption of MBIT process.4.510.02.8 On-chip damper diode.3.20.91.20

Ordering number : ENN6500A2SD2624NPN Triple Diffused Planar Silicon Transistor2SD2624Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2624] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.

Ordering number:ENN6352NPN Triple Diffused Planar Silicon Transistor2SD2629Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2079C High reliability (Adoption of HVP process).[2SD2629] Adoption of MBIT process.4.510.02.8 On-chip damper diode.3.20.91.20.70.75

Ordering number : ENN6478A2SD2627LSNPN Triple Diffused Planar Silicon Transistor2SD2627LSColor TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process).[2SD2627] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0.91.

Transistors2SD2620JSilicon NPN epitaxial planer typeUnit: mmFor low-frequency amplification1.60+0.050.030.12+0.030.011.000.053 Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)1 2 High emitter to base voltage VBEO 0.270.02(0.50)(0.50) SS-mini type package Absolute Maximum Ratings Ta = 2

Transistors2SD2623Silicon NPN epitaxial planar typeFor low-frequency amplificationUnit: mm0.15+0.100.3+0.10.050.0 Features3 Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.1 2(0.65) (0.65) Absolute Maximum Ratings Ta = 25C1.30.1Parameter Symbol Rating Unit2

Transistors2SD2621Silicon NPN epitaxial planar typeFor low-frequency driver amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.023 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO0.23+0.05 1 20.02(0.40)(0.40)0.800.05 Absolute Maximum Ratings Ta