2SD467C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SD467 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB561 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD467 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collec

2SD467(BR3DG467K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features 2SB561(BR3CG561K) Complementary pair with 2SB561(BR3CG561K). / Applications Low frequency power amplifier. / Equivalent Circuit

UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES 1 TO-92 * Low frequency power amplifier * Complement to 2SB562 1 TO-92NL *Pb-free plating product number 2SD468L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SD468-x-T92-B 2SD468L-x-T92-B TO-92 E C B Tape Box 2SD

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO 92L 2SD468 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES Low Frequency Power Amplifier 3. BASE Complementary Pair with 2SB562 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitte

************************************************************************************ 2SD468 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS(Ta=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter -Base Voltage VEBO 5 V Collector Current (DC) Ic 1 A Collector Dissipation (Tc=25

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD460 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching

isc Silicon NPN Darlingtion Power Transistor 2SD469 DESCRIPTION Low Collector-Emitter Breakdown Voltage V = 110V (Min) (BR)CEO Collector Power Dissipation Pc=100W@TC=25 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIM

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD463 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 3000(Min) @I = 5A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power