PXTA44 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PXTA44Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=100A, IE=0Collector-Base Breakdown Voltage 500 VV(BR)CEO IC=1mA, IB=0Collector-Emitter Breakdown Voltage 400 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 6VICBO VCB=400V, IE=0Collector-Base Cutoff Current 100 nAIEBO VEB=4V, IC=0Emitter-

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXTA42NPN high-voltage transistorProduct data sheet 2004 Dec 09Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheetNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base Teleph

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXTA42NPN high-voltage transistor1999 Apr 26Product specificationSupersedes data of 1997 Jun 18Philips Semiconductors Product specificationNPN high-voltage transistor PXTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base

PXTA42300 V, 100 mA NPN high-voltage transistorRev. 5 11 July 2011 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PXTA92.1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead