PXTA44 - аналоги, параметры транзистора - Справочник транзисторов

PXTA44 даташит

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PXTA44 Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=100 A, IE=0 Collector-Base Breakdown Voltage 500 V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 400 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 6V ICBO VCB=400V, IE=0 Collector-Base Cutoff Current 100 nA IEBO VEB=4V, IC=0 Emitter-

9.1. Size:99K philips
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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PXTA42 NPN high-voltage transistor Product data sheet 2004 Dec 09 Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheet NPN high-voltage transistor PXTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS 3 base Teleph

9.2. Size:46K philips
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXTA42 NPN high-voltage transistor 1999 Apr 26 Product specification Supersedes data of 1997 Jun 18 Philips Semiconductors Product specification NPN high-voltage transistor PXTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS 3 base

9.3. Size:790K nxp
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PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PXTA92. 1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat lead

Другие транзисторы: PMC4106, PXT8050-C, PXT8050-D, PXT8050-D3, PXT8550-B, PXT8550-C, PXT8550-D, PXT8550-D3, NJW0281G, PZT2222, PZT3904T1G, PZT651T1G, PZT751T1G, PZTA28, PZTA42T1G, PZTA43, PZTA45