PZTA28 Todos los transistores

 ..1. Size:628K  fairchild semi
 mpsa28 mmbta28 pzta28.pdf

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

 9.1. Size:82K  fairchild semi
 pzta29.pdf

PZTA29 NPN Darlington Transistor This device designed for applications requiring extremely high current gain at collector currents to 500mA. Sourced from process 03. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 10

 9.2. Size:652K  secos
 pzta27.pdf

PZTA27 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA27 is designed for darlington amplifier high current gain collector current to 500mA. Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. A 2 7 D 0.02 0.10 1 6.30 6.70 Date Code E 0 10 2 6.30 6.