PZTA28 - аналоги, параметры транзистора - Справочник транзисторов

PZTA28 даташит

..1. Size:628K fairchild semi
mpsa28 mmbta28 pzta28.pdf pdf_icon

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

9.1. Size:82K fairchild semi
pzta29.pdf pdf_icon

PZTA29 NPN Darlington Transistor This device designed for applications requiring extremely high current gain at collector currents to 500mA. Sourced from process 03. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 10

9.2. Size:652K secos
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PZTA27 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA27 is designed for darlington amplifier high current gain collector current to 500mA. Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. A 2 7 D 0.02 0.10 1 6.30 6.70 Date Code E 0 10 2 6.30 6.

Другие транзисторы: PXT8550-C, PXT8550-D, PXT8550-D3, PXTA44, PZT2222, PZT3904T1G, PZT651T1G, PZT751T1G, 2SC2240, PZTA42T1G, PZTA43, PZTA45, PZTA92T1G, PZTA93, PZTA96ST1G, QS5W1, QS5W2