2N6600 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6600
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.075 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3500 MHz
Capacitancia de salida (Cc): 1.7 pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO33-1
Búsqueda de reemplazo de transistor bipolar 2N6600
2N6600 Datasheet (PDF)
2n3773 2n6609.pdf
Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power PNP 2N6609 Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid d
2n3773 2n6609.pdf
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com
2n3773 2n6609.pdf
NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching http //onsemi.com circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY Feat
Otros transistores... 2N6594 , 2N6595 , 2N6596 , 2N6597 , 2N6598 , 2N6599 , 2N66 , 2N660 , D667 , 2N6601 , 2N6602 , 2N6603 , 2N6604 , 2N6609 , 2N661 , 2N6617 , 2N6618 .
History: CHDTD133HKGP | STC5080 | CHDTC115EEGP | CHUMD6GP | CHFMA5GP | MPS2907R | 2SC1872
History: CHDTD133HKGP | STC5080 | CHDTC115EEGP | CHUMD6GP | CHFMA5GP | MPS2907R | 2SC1872
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