R13003F1 Todos los transistores

 

R13003F1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R13003F1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO92

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R13003F1 datasheet

 ..1. Size:407K  blue-rocket-elect
r13003f1.pdf pdf_icon

R13003F1

R13003F1(BR3DA13003F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency

 8.1. Size:83K  cdil
cr13003.pdf pdf_icon

R13003F1

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package E C B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 700 V VCEO Collector Emitter (sus) Voltage 400 V Emitter Base Voltage VEBO 9.0 V

 8.2. Size:336K  winsemi
wbr13003b2.pdf pdf_icon

R13003F1

WBR13003B2 WBR13003B2 WBR13003B2 WBR13003B2 High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par

 8.3. Size:344K  winsemi
wbr13003d.pdf pdf_icon

R13003F1

WBR13003D WBR13003D WBR13003D WBR13003D High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description General Description General Description General Description This Device is designed for high voltage, High speed switc

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