Справочник транзисторов. R13003F1

 

Биполярный транзистор R13003F1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: R13003F1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 5 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO92

 Аналоги (замена) для R13003F1

 

 

R13003F1 Datasheet (PDF)

 ..1. Size:407K  blue-rocket-elect
r13003f1.pdf

R13003F1
R13003F1

R13003F1(BR3DA13003F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency

 8.1. Size:83K  cdil
cr13003.pdf

R13003F1
R13003F1

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CR13003TO126 Plastic PackageECBSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 700 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO 9.0 V

 8.2. Size:336K  winsemi
wbr13003b2.pdf

R13003F1
R13003F1

WBR13003B2WBR13003B2WBR13003B2WBR13003B2High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Par

 8.3. Size:344K  winsemi
wbr13003d.pdf

R13003F1
R13003F1

WBR13003DWBR13003DWBR13003DWBR13003DHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speedswitc

 8.4. Size:406K  winsemi
sbr13003b.pdf

R13003F1
R13003F1

SBR13003BSBR13003BSBR13003BSBR13003BHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Paramet

 8.5. Size:313K  winsemi
wbr13003b3.pdf

R13003F1
R13003F1

WBR13003B3WBR13003B3WBR13003B3WBR13003B3High Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for

 8.6. Size:269K  winsemi
wbr13003d1.pdf

R13003F1
R13003F1

WBR13003D1WBR13003D1WBR13003D1WBR13003D1High Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speeds

 8.7. Size:329K  winsemi
wbr13003.pdf

R13003F1
R13003F1

WBR13003WBR13003WBR13003WBR13003High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Parameter T

 8.8. Size:281K  winsemi
sbr13003bd.pdf

R13003F1
R13003F1

SBR13003BDSBR13003BDSBR13003BDSBR13003BDHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability1.Base Wide Reverse Bias SOA3.EmitterGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switchin

 8.9. Size:355K  winsemi
wbr13003ld.pdf

R13003F1
R13003F1

WBR13003LDWBR13003LDWBR13003LDWBR13003LDHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability High Voltage Capability Wide Soa Bu

 8.10. Size:317K  winsemi
wbr13003b2d.pdf

R13003F1
R13003F1

WBR13003B2DWBR13003B2DWBR13003B2DWBR13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

 8.11. Size:350K  winsemi
wbr13003x.pdf

R13003F1
R13003F1

WBR13003XWBR13003XWBR13003XWBR13003XHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionGener

 8.12. Size:316K  winsemi
wbr13003b.pdf

R13003F1
R13003F1

WBR13003BWBR13003BWBR13003BWBR13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switchingmode power supply.Absolute Maximum RatingsSymbol Parameter Tes

 8.13. Size:344K  winsemi
wbr13003l2.pdf

R13003F1
R13003F1

WBR13003L2WBR13003L2WBR13003L2WBR13003L2High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheel

 8.14. Size:354K  winsemi
sbr13003d.pdf

R13003F1
R13003F1

SBR13003DSBR13003DSBR13003DSBR13003DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling

 8.15. Size:202K  winsemi
sbr13003h.pdf

R13003F1
R13003F1

SBR13003HHigh Voltage FastSwitching NPNPower Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value U

 8.16. Size:327K  winsemi
sbr13003b1.pdf

R13003F1
R13003F1

SBR13003B1SBR13003B1SBR13003B1SBR13003B1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

 8.17. Size:460K  semiwell
sbr13003a.pdf

R13003F1
R13003F1

SBR13003ASemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-126This devices is designed for high voltage, high speed s

 8.18. Size:142K  haolin elec
hr13003.pdf

R13003F1
R13003F1

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 HR13003 TRANSISTOR (NPN) FEATURES High total power disspation. (pc=1.25w) MARKING:MJE13003 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER 1 2 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 4

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