R13003F1. Аналоги и основные параметры
Наименование производителя: R13003F1
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 5 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO92
Аналоги (замена) для R13003F1
- подборⓘ биполярного транзистора по параметрам
R13003F1 даташит
..1. Size:407K blue-rocket-elect
r13003f1.pdf 

R13003F1(BR3DA13003F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency
8.1. Size:83K cdil
cr13003.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package E C B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 700 V VCEO Collector Emitter (sus) Voltage 400 V Emitter Base Voltage VEBO 9.0 V
8.2. Size:336K winsemi
wbr13003b2.pdf 

WBR13003B2 WBR13003B2 WBR13003B2 WBR13003B2 High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par
8.3. Size:344K winsemi
wbr13003d.pdf 

WBR13003D WBR13003D WBR13003D WBR13003D High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description General Description General Description General Description This Device is designed for high voltage, High speed switc
8.4. Size:406K winsemi
sbr13003b.pdf 

SBR13003B SBR13003B SBR13003B SBR13003B High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Paramet
8.5. Size:313K winsemi
wbr13003b3.pdf 

WBR13003B3 WBR13003B3 WBR13003B3 WBR13003B3 High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for
8.6. Size:269K winsemi
wbr13003d1.pdf 

WBR13003D1 WBR13003D1 WBR13003D1 WBR13003D1 High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description General Description General Description General Description This Device is designed for high voltage, High speed s
8.7. Size:329K winsemi
wbr13003.pdf 

WBR13003 WBR13003 WBR13003 WBR13003 High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter T
8.8. Size:281K winsemi
sbr13003bd.pdf 

SBR13003BD SBR13003BD SBR13003BD SBR13003BD HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switchin
8.9. Size:355K winsemi
wbr13003ld.pdf 

WBR13003LD WBR13003LD WBR13003LD WBR13003LD High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability High Voltage Capability Wide Soa Bu
8.10. Size:317K winsemi
wbr13003b2d.pdf 

WBR13003B2D WBR13003B2D WBR13003B2D WBR13003B2D High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply.
8.11. Size:350K winsemi
wbr13003x.pdf 

WBR13003X WBR13003X WBR13003X WBR13003X High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description Gener
8.12. Size:316K winsemi
wbr13003b.pdf 

WBR13003B WBR13003B WBR13003B WBR13003B HighVoltageFast-SwitchingNPNPowerTransistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Tes
8.13. Size:344K winsemi
wbr13003l2.pdf 

WBR13003L2 WBR13003L2 WBR13003L2 WBR13003L2 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheel
8.14. Size:354K winsemi
sbr13003d.pdf 

SBR13003D SBR13003D SBR13003D SBR13003D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling
8.15. Size:202K winsemi
sbr13003h.pdf 

SBR13003H High Voltage Fast Switching NPNPower Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value U
8.16. Size:327K winsemi
sbr13003b1.pdf 

SBR13003B1 SBR13003B1 SBR13003B1 SBR13003B1 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G
8.17. Size:460K semiwell
sbr13003a.pdf 

SBR13003A SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol 2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation 1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A 3.Emitter General Description TO-126 This devices is designed for high voltage, high speed s
8.18. Size:142K haolin elec
hr13003.pdf 

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 HR13003 TRANSISTOR (NPN) FEATURES High total power disspation. (pc=1.25w) MARKING MJE13003 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 4
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