SMBT35200MT1G Todos los transistores

 

SMBT35200MT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMBT35200MT1G
   Código: G4
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.63 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 35 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT457
 

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SMBT35200MT1G datasheet

 ..1. Size:152K  onsemi
mbt35200mt1 smbt35200mt1g.pdf pdf_icon

SMBT35200MT1G

MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM

 9.1. Size:178K  siemens
smbt3906.pdf pdf_icon

SMBT35200MT1G

PNP Silicon Switching Transistor SMBT 3906 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3904 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3906 s2A Q68000-A4417 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0

 9.2. Size:72K  siemens
smbt39pn.pdf pdf_icon

SMBT35200MT1G

SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 High current gain 5 Low collector-emitter saturation voltage 6 Two (galvanic) internal isolated NPN/PNP Transistors in one package 3 2 VPS05604 1 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C SMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C

 9.3. Size:31K  siemens
smbt3906 s2a sot363.pdf pdf_icon

SMBT35200MT1G

SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3904S (NPN) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3906S s2A Q62702-A1202 1/4=E1/E2 2/5=B1/B

Otros transistores... SPT5006M , SPT5006S1 , SPT5008-3 , SPT5008-61 , SPT5008M , SPT5008S1 , SPT5330 , MBT35200MT1 , NJW0281G , MBT3904DW1T1G , MBT3904DW2T1G , SMBT3904DW1T1G , MBT3906DW1T1G , SMBT3906DW1T1G , SMBT3906S , MBT3946DW1T1G , SMBT3946DW1T1G .

 

 
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