SMBT35200MT1G Datasheet. Specs and Replacement

Type Designator: SMBT35200MT1G  📄📄 

SMD Transistor Code: G4

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.63 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT457

 SMBT35200MT1G Substitution

- BJT ⓘ Cross-Reference Search

 

SMBT35200MT1G datasheet

 ..1. Size:152K  onsemi

mbt35200mt1 smbt35200mt1g.pdf pdf_icon

SMBT35200MT1G

MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM... See More ⇒

 9.1. Size:178K  siemens

smbt3906.pdf pdf_icon

SMBT35200MT1G

PNP Silicon Switching Transistor SMBT 3906 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3904 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3906 s2A Q68000-A4417 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0... See More ⇒

 9.2. Size:72K  siemens

smbt39pn.pdf pdf_icon

SMBT35200MT1G

SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 High current gain 5 Low collector-emitter saturation voltage 6 Two (galvanic) internal isolated NPN/PNP Transistors in one package 3 2 VPS05604 1 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C SMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C ... See More ⇒

 9.3. Size:31K  siemens

smbt3906 s2a sot363.pdf pdf_icon

SMBT35200MT1G

SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3904S (NPN) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3906S s2A Q62702-A1202 1/4=E1/E2 2/5=B1/B... See More ⇒

Detailed specifications: SPT5006M, SPT5006S1, SPT5008-3, SPT5008-61, SPT5008M, SPT5008S1, SPT5330, MBT35200MT1, NJW0281G, MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G, MBT3906DW1T1G, SMBT3906DW1T1G, SMBT3906S, MBT3946DW1T1G, SMBT3946DW1T1G

Keywords - SMBT35200MT1G pdf specs

 SMBT35200MT1G cross reference

 SMBT35200MT1G equivalent finder

 SMBT35200MT1G pdf lookup

 SMBT35200MT1G substitution

 SMBT35200MT1G replacement