SMBT35200MT1G Datasheet. Specs and Replacement
Type Designator: SMBT35200MT1G 📄📄
SMD Transistor Code: G4
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.63 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT457
SMBT35200MT1G Substitution
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SMBT35200MT1G datasheet
..1. Size:152K onsemi
mbt35200mt1 smbt35200mt1g.pdf 

MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM... See More ⇒
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PNP Silicon Switching Transistor SMBT 3906 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3904 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3906 s2A Q68000-A4417 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0... See More ⇒
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SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 High current gain 5 Low collector-emitter saturation voltage 6 Two (galvanic) internal isolated NPN/PNP Transistors in one package 3 2 VPS05604 1 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C SMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C ... See More ⇒
9.3. Size:31K siemens
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SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3904S (NPN) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3906S s2A Q62702-A1202 1/4=E1/E2 2/5=B1/B... See More ⇒
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NPN Silicon Switching Transistor SMBT 3904 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3906 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3904 s1A Q68000-A4416 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0... See More ⇒
9.5. Size:79K siemens
smbt39s.pdf 

SMBT 3904S NPN Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3906S (PNP) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B... See More ⇒
9.6. Size:212K siemens
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NPN Silicon Switching Transistor SMBT 3904 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3906 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3904 s1A Q68000-A4416 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0... See More ⇒
9.7. Size:29K siemens
smbt3904s s1a sot363.pdf 

SMBT 3904S NPN Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3906S (PNP) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B... See More ⇒
9.8. Size:48K siemens
smbt3904pn s3p sot363.pdf 

SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 High current gain 5 Low collector-emitter saturation voltage 6 Two (galvanic) internal isolated NPN/PNP Transistors in one package 3 2 VPS05604 1 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C SMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C ... See More ⇒
9.10. Size:862K infineon
smbt3904 mmbt3904 smbt3904s.pdf 

SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S Two (galvanic) internal isolated transistors with good matching in one package Complementary types SMBT3906... MMBT3906 SMBT3904S For orientation in reel see package information below Pb-free (RoHS compliant) ... See More ⇒
9.11. Size:881K infineon
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SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U Two (galvanic) internal isolated transistor with good matching in one package Complementary types SMBT3904...MMBT3904 (NPN) SMBT3906S/ U for orientation in reel see package information below P... See More ⇒
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SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type 2 SMBT3904/ MMBT3904 (NPN) 1 VPS05161 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 s2A SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage VCEO 40 Coll... See More ⇒
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SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U Two (galvanic) internal isolated transistors with good matching in one package Complementary types SMBT3906... MMBT3906 SMBT3904S / U For orientation in reel see package information below Pb-free ... See More ⇒
9.14. Size:847K infineon
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SMBT3904...PN NPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking Pin Configuration Package ... See More ⇒
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SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U Two (galvanic) internal isolated transistor with good matching in one package Complementary types SMBT3904...MMBT3904 (NPN) SMBT3906S/ U for orientation in reel see package information below P... See More ⇒
9.17. Size:76K infineon
smbt3906u.pdf 

SMBT3906U PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package 3 2 Complementary type SMBT3904U (NPN) 1 C1 B2 E2 VPW09197 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking Pin Configuration Package SMBT3906U s2A 1=E1 2=... See More ⇒
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MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat... See More ⇒
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MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors http //onsemi.com The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is MARKING designed for general purpose amplifier applications and is housed in DIAGRAM the SOT-363 six-leaded surface mount package. By putting two 6 discrete devices in one ... See More ⇒
9.20. Size:96K onsemi
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf 

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de... See More ⇒
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MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount ... See More ⇒
9.22. Size:130K onsemi
mbt3906dw1t1g smbt3906dw1t1g.pdf 

MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount ... See More ⇒
9.23. Size:169K onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdf 

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount ... See More ⇒
Detailed specifications: SPT5006M, SPT5006S1, SPT5008-3, SPT5008-61, SPT5008M, SPT5008S1, SPT5330, MBT35200MT1, NJW0281G, MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G, MBT3906DW1T1G, SMBT3906DW1T1G, SMBT3906S, MBT3946DW1T1G, SMBT3946DW1T1G
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