SMBT3904DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MBT3904DW1T1G,MBT3904DW2T1G,SMBT3904DW1T1GDual General PurposeTransistorshttp://onsemi.comThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It isMARKINGdesigned for general purpose amplifier applications and is housed inDIAGRAMthe SOT-363 six-leaded surface mount package. By putting two6discrete devices in one

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0

NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0

SMBT 3904SNPN Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA5 Low collector-emitter saturation voltage6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type: SMBT 3906S (PNP)32VPS056041Type Marking Ordering Code Pin Configuration PackageSMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B

SMBT 3904PNNPN Silicon Switching Transistor ArrayPreliminary data4 High current gain5 Low collector-emitter saturation voltage6 Two (galvanic) internal isolated NPN/PNP Transistors in one package32VPS056041PIN ConfigurationType Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = CSMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant)

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S / U: For orientation in reel see package information below Pb-free

SMBT3904...PNNPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101SMBT3904PNSMBT3904UPNC1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07177Type Marking Pin Configuration Package