SMBT3904DW1T1G Todos los transistores

 

SMBT3904DW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMBT3904DW1T1G

Código: MA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT363

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SMBT3904DW1T1G datasheet

 ..1. Size:908K  onsemi
smbt3904dw1t1g mbt3904dw.pdf pdf_icon

SMBT3904DW1T1G

MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors http //onsemi.com The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is MARKING designed for general purpose amplifier applications and is housed in DIAGRAM the SOT-363 six-leaded surface mount package. By putting two 6 discrete devices in one

 3.1. Size:96K  onsemi
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf pdf_icon

SMBT3904DW1T1G

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de

 6.1. Size:215K  siemens
smbt3904 s1a sot23.pdf pdf_icon

SMBT3904DW1T1G

NPN Silicon Switching Transistor SMBT 3904 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3906 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3904 s1A Q68000-A4416 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0

 6.2. Size:212K  siemens
smbt3904.pdf pdf_icon

SMBT3904DW1T1G

NPN Silicon Switching Transistor SMBT 3904 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3906 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3904 s1A Q68000-A4416 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0

Otros transistores... SPT5008-61 , SPT5008M , SPT5008S1 , SPT5330 , MBT35200MT1 , SMBT35200MT1G , MBT3904DW1T1G , MBT3904DW2T1G , TIP2955 , MBT3906DW1T1G , SMBT3906DW1T1G , SMBT3906S , MBT3946DW1T1G , SMBT3946DW1T1G , SML4017 , SML4017A , SML5321 .

History: SPT5008M | BC556A

 

 

 


History: SPT5008M | BC556A

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