Справочник транзисторов. SMBT3904DW1T1G

 

Биполярный транзистор SMBT3904DW1T1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SMBT3904DW1T1G
   Маркировка: MA
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT363

 Аналоги (замена) для SMBT3904DW1T1G

 

 

SMBT3904DW1T1G Datasheet (PDF)

 ..1. Size:908K  onsemi
smbt3904dw1t1g mbt3904dw.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

MBT3904DW1T1G,MBT3904DW2T1G,SMBT3904DW1T1GDual General PurposeTransistorshttp://onsemi.comThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It isMARKINGdesigned for general purpose amplifier applications and is housed inDIAGRAMthe SOT-363 six-leaded surface mount package. By putting two6discrete devices in one

 3.1. Size:96K  onsemi
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

 6.1. Size:215K  siemens
smbt3904 s1a sot23.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0

 6.2. Size:212K  siemens
smbt3904.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0

 6.3. Size:29K  siemens
smbt3904s s1a sot363.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

SMBT 3904SNPN Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA5 Low collector-emitter saturation voltage6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type: SMBT 3906S (PNP)32VPS056041Type Marking Ordering Code Pin Configuration PackageSMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B

 6.4. Size:48K  siemens
smbt3904pn s3p sot363.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

SMBT 3904PNNPN Silicon Switching Transistor ArrayPreliminary data4 High current gain5 Low collector-emitter saturation voltage6 Two (galvanic) internal isolated NPN/PNP Transistors in one package32VPS056041PIN ConfigurationType Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = CSMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C

 6.5. Size:862K  infineon
smbt3904 mmbt3904 smbt3904s.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant)

 6.6. Size:145K  infineon
smbt3904series mmbt3904.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S / U: For orientation in reel see package information below Pb-free

 6.7. Size:847K  infineon
smbt3904pn smbt3904upn.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

SMBT3904...PNNPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101SMBT3904PNSMBT3904UPNC1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07177Type Marking Pin Configuration Package

 6.8. Size:1745K  infineon
smbt3904 mmbt3904 smbt3904s smbt3904u.pdf

SMBT3904DW1T1G
SMBT3904DW1T1G

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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