MBT3906DW1T1G Todos los transistores

 

MBT3906DW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBT3906DW1T1G

Código: A2

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT363

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MBT3906DW1T1G datasheet

 ..1. Size:130K  onsemi
mbt3906dw1t1g smbt3906dw1t1g.pdf pdf_icon

MBT3906DW1T1G

MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 0.1. Size:193K  lrc
lmbt3906dw1t1g.pdf pdf_icon

MBT3906DW1T1G

 2.1. Size:178K  onsemi
mbt3906dw1t1.pdf pdf_icon

MBT3906DW1T1G

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 http //onsemi.com six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications whe

 2.2. Size:344K  willas
mmbt3906dw1t1.pdf pdf_icon

MBT3906DW1T1G

FM120-M WILLAS MMBT3906DW1T1 THRU Dual Bias Resistor Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi

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