Биполярный транзистор MBT3906DW1T1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MBT3906DW1T1G
Маркировка: A2
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: SOT363
- подбор биполярного транзистора по параметрам
MBT3906DW1T1G Datasheet (PDF)
mbt3906dw1t1g smbt3906dw1t1g.pdf
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MBT3906DW1T1G,SMBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount
lmbt3906dw1t1g.pdf
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LESHAN RADIO COMPANY, LTD.Dual Bias ResistorLMBT3906DW1T1GTransistor654The LMBT3906DW1T1 device isa spinoff of our popularSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT3631sixleaded surface mount package. By putting two discrete devices in23one package, this device is ideal for low
mbt3906dw1t1.pdf
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MBT3906DW1T1GDual General PurposeTransistorThe MBT3906DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363http://onsemi.comsix-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplications whe
mmbt3906dw1t1.pdf
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FM120-M WILLAS MMBT3906DW1T1THRUDual Bias Resistor TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimi
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050