MBT3946DW1T1G Todos los transistores

 

MBT3946DW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBT3946DW1T1G

Código: 46

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT363

 Búsqueda de reemplazo de MBT3946DW1T1G

- Selecciónⓘ de transistores por parámetros

 

MBT3946DW1T1G datasheet

 ..1. Size:174K  onsemi
smbt3946dw1t1g mbt3946dw1t1g.pdf pdf_icon

MBT3946DW1T1G

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 ..2. Size:169K  onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdf pdf_icon

MBT3946DW1T1G

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 0.1. Size:664K  lrc
lmbt3946dw1t1g lmbt3946dw1t3g.pdf pdf_icon

MBT3946DW1T1G

LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S

 0.2. Size:664K  lrc
lmbt3946dw1t1g.pdf pdf_icon

MBT3946DW1T1G

LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S

Otros transistores... MBT35200MT1 , SMBT35200MT1G , MBT3904DW1T1G , MBT3904DW2T1G , SMBT3904DW1T1G , MBT3906DW1T1G , SMBT3906DW1T1G , SMBT3906S , BC556 , SMBT3946DW1T1G , SML4017 , SML4017A , SML5321 , SML7A12 , SMLA42CSM , SMLA42DCSM , SMLBFY90 .

History: KSU13003ER

 

 

 


History: KSU13003ER

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

tip36c datasheet | 2sc461 | hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644

 

 

↑ Back to Top
.