MBT3946DW1T1G datasheet, аналоги, основные параметры

Наименование производителя: MBT3946DW1T1G  📄📄 

Маркировка: 46

Тип материала: Si

Полярность: NPN*PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.2 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 250 MHz

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT363

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 Аналоги (замена) для MBT3946DW1T1G

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MBT3946DW1T1G даташит

 ..1. Size:174K  onsemi
 smbt3946dw1t1g mbt3946dw1t1g.pdf pdf_icon

MBT3946DW1T1G

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 ..2. Size:169K  onsemi
 mbt3946dw1t1g smbt3946dw1t1g.pdf pdf_icon

MBT3946DW1T1G

MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 0.1. Size:664K  lrc
 lmbt3946dw1t1g lmbt3946dw1t3g.pdf pdf_icon

MBT3946DW1T1G

LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S

 0.2. Size:664K  lrc
 lmbt3946dw1t1g.pdf pdf_icon

MBT3946DW1T1G

LMBT3946DW1T1G S-LMBT3946DW1T1G Dual General Purpose Transistors PNP/NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V S

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MBT35200MT1, SMBT35200MT1G, MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G, MBT3906DW1T1G, SMBT3906DW1T1G, SMBT3906S, BC556, SMBT3946DW1T1G, SML4017, SML4017A, SML5321, SML7A12, SMLA42CSM, SMLA42DCSM, SMLBFY90