2SD1782KFRA
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1782KFRA
Código: AJQ_AJR
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120
MHz
Capacitancia de salida (Cc): 7.5
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
SC59
SMT3
Búsqueda de reemplazo de transistor bipolar 2SD1782KFRA
2SD1782KFRA
Datasheet (PDF)
..1. Size:934K rohm
2sd1782kfra.pdf 
2SD1782KFRA2SD1782KTransistors AEC-Q101 QualifiedPower Transistor (80V, 0.5A) 2SD1782K2SD1782KFRA External dimensions (Unit : mm) Features 1) Low VCE(sat).2.90.2VCE(sat) =0.2V(Typ.) 1.1+0.21.90.2 -0.1(IC / IB=0.5 A / 50mA) 0.80.10.95 0.952) High VCEO,VCEO=80V (1) (2)0~0.12SB1198KFRA3) Complements the 2SB1198K. (3)+0.10.15-0.06+0.10.4-0.0
6.1. Size:1126K rohm
2sd1782k.pdf
2SD1782KDatasheetPower Transistor (80V, 500mA)lOutlinel SOT-346 Parameter Value SC-59 VCEO80VIC500mASMT3lFeatures lInner circuitl l1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=500mA/50mA)2)High breakdown voltage. BVCEO=80V3)Complements the 2SB1198KlApplicationlDRIVERlPackaging specificationslBasic
7.1. Size:92K rohm
2sd1782.pdf
TransistorsPower Transistor (80V, 0.5A)2SD1782KFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 0.5A / 50mA)2) High VCEO, VCEO = 80V3) Complements the 2SB1198K.FStructureEpitaxial planar typeNPN silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-222-D93)271Transistors 2SD1782KFElectrical characteristics (Ta = 25_
7.2. Size:84K utc
2sd1782.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTCs advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitte
7.3. Size:514K jiangsu
2sd1782.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SD1782 TRANSISTOR (NPN)FEATURES 1. BASE Low VCE(sat)2. EMITTER High BVCEO3. COLLECTOR Complements the 2SB1198MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Bas
7.4. Size:335K kexin
2sd1782.pdf
SMD Type TransistorsNPN Transistors2SD1782SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=80V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collect
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