BUL1102EFP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL1102EFP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 1100 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de transistor bipolar BUL1102EFP
BUL1102EFP Datasheet (PDF)
bul1102efp.pdf
BUL1102EHigh voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speedTABApplicationsFour lamp electronic ballast for:3322 120 V mains in push-pull configuration 11 277 V mains in half bridge current feed TO-220FPTO-220configurationDescriptionThis is a high voltage fast switching NPN power Figure 1.
bul1102e.pdf
BUL1102EHigh voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speedTABApplicationsFour lamp electronic ballast for:3322 120 V mains in push-pull configuration 11 277 V mains in half bridge current feed TO-220FPTO-220configurationDescriptionThis is a high voltage fast switching NPN power Figure 1.
bul1102e.pdf
isc Silicon NPN Power Transistor BUL1102EDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFour lamp electronic ballsat for : 120v mains in push-pullconfigurationABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emit
bul118-1.pdf
BULD118-1HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS:3 ELECTRONIC BALLASTS FOR21FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERSIPAKDESCRIPTION(TO-251)The device is manufactured usin
bul116d.pdf
BUL116DMEDIUM VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATA INTEGRATED ANTIPARALLELCOLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 3223 W AT 110 V A.C. MAINS1 FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERS
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BDX28-10
History: BDX28-10
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050