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BUL1102EFP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUL1102EFP
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 1100 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 12
   Paquete / Cubierta: TO220FP

 Búsqueda de reemplazo de transistor bipolar BUL1102EFP

 

BUL1102EFP Datasheet (PDF)

 ..1. Size:399K  st
bul1102efp.pdf

BUL1102EFP
BUL1102EFP

BUL1102EHigh voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speedTABApplicationsFour lamp electronic ballast for:3322 120 V mains in push-pull configuration 11 277 V mains in half bridge current feed TO-220FPTO-220configurationDescriptionThis is a high voltage fast switching NPN power Figure 1.

 6.1. Size:398K  st
bul1102e.pdf

BUL1102EFP
BUL1102EFP

BUL1102EHigh voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speedTABApplicationsFour lamp electronic ballast for:3322 120 V mains in push-pull configuration 11 277 V mains in half bridge current feed TO-220FPTO-220configurationDescriptionThis is a high voltage fast switching NPN power Figure 1.

 6.2. Size:207K  inchange semiconductor
bul1102e.pdf

BUL1102EFP
BUL1102EFP

isc Silicon NPN Power Transistor BUL1102EDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFour lamp electronic ballsat for : 120v mains in push-pullconfigurationABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emit

 9.1. Size:86K  st
bul118-1.pdf

BUL1102EFP
BUL1102EFP

BULD118-1HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS:3 ELECTRONIC BALLASTS FOR21FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERSIPAKDESCRIPTION(TO-251)The device is manufactured usin

 9.2. Size:218K  st
bul116d.pdf

BUL1102EFP
BUL1102EFP

BUL116DMEDIUM VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATA INTEGRATED ANTIPARALLELCOLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 3223 W AT 110 V A.C. MAINS1 FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BDX28-10

 

 
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History: BDX28-10

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