Биполярный транзистор BUL1102EFP - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUL1102EFP
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора: TO220FP
Аналоги (замена) для BUL1102EFP
BUL1102EFP Datasheet (PDF)
bul1102efp.pdf
BUL1102EHigh voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speedTABApplicationsFour lamp electronic ballast for:3322 120 V mains in push-pull configuration 11 277 V mains in half bridge current feed TO-220FPTO-220configurationDescriptionThis is a high voltage fast switching NPN power Figure 1.
bul1102e.pdf
BUL1102EHigh voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speedTABApplicationsFour lamp electronic ballast for:3322 120 V mains in push-pull configuration 11 277 V mains in half bridge current feed TO-220FPTO-220configurationDescriptionThis is a high voltage fast switching NPN power Figure 1.
bul1102e.pdf
isc Silicon NPN Power Transistor BUL1102EDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFour lamp electronic ballsat for : 120v mains in push-pullconfigurationABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emit
bul118-1.pdf
BULD118-1HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS:3 ELECTRONIC BALLASTS FOR21FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERSIPAKDESCRIPTION(TO-251)The device is manufactured usin
bul116d.pdf
BUL116DMEDIUM VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATA INTEGRATED ANTIPARALLELCOLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 3223 W AT 110 V A.C. MAINS1 FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERS
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
