BUL128DR8 Todos los transistores

 ..1. Size:199K  foshan
 bul128dr8.pdf

BUL128DR8 NPN /SILICON NPN TRANSISTOR Purpose Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. N Features NPN transistor,high voltage capability,low

 6.1. Size:201K  foshan
 bul128dr7.pdf

BUL128DR7 NPN /SILICON NPN TRANSISTOR Purpose Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. N Features NPN transistor,high voltage capability,low

 7.1. Size:224K  st
 bul128d-b.pdf

BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES Figure 1 Package TYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION n VERY HIGH SWITCHING SPEED n INTEGRATED ANTIPARALLEL 3 COLLECTOR- EMITTER DIODE 2 1 TO-220 APPLICATIONS n ELECTRONIC BALLAST FO

 7.2. Size:72K  st
 bul128d.pdf

BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 INTEGRATED ANTIPARALLEL 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

 7.3. Size:231K  lge
 bul128d.pdf

BUL128D(NPN) TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vol

 7.4. Size:165K  sunroc
 bul128d.pdf

SUNROC BUL128D TRANSISTOR (NPN) TO-220 FEATURES ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage

 7.5. Size:61K  inchange semiconductor
 bul128d.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL128D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base