Биполярный транзистор BUL128DR8 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUL128DR8
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 7 MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO220F
Аналоги (замена) для BUL128DR8
BUL128DR8 Datasheet (PDF)
bul128dr8.pdf
BUL128DR8 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low
bul128dr7.pdf
BUL128DR7 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low
bul128d-b.pdf
BUL128D-BHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn STMicroelectronics PREFERRED SALES Figure 1: PackageTYPEn NPN TRANSISTORn HIGH VOLTAGE CAPABILITYn LOW SPREAD OF DYNAMIC PARAMETERSn MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATIONn VERY HIGH SWITCHING SPEEDn INTEGRATED ANTIPARALLEL 3COLLECTOR- EMITTER DIODE21 TO-220APPLICATIONSn ELECTRONIC BALLAST FO
bul128d.pdf
BUL128D-B HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED3 INTEGRATED ANTIPARALLEL2COLLECTOR-EMITTER DIODE1APPLICATIONS:TO-220 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING
bul128d.pdf
BUL128D(NPN) TO-220 TransistorTO-2201.BASE 2.COLLECTOR 3.EMITTER 3 21Features ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Vol
bul128d.pdf
SUNROC BUL128D TRANSISTOR (NPN) TO-220 FEATURES ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage
bul128d.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL128D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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