BUL45D2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL45D2G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 13 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 22
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BUL45D2G
BUL45D2G Datasheet (PDF)
bul45d2g.pdf
BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodewww.onsemi.comand Built-in Efficient AntisaturationNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lot700 VOLTS, 75 WATTSminimum spread (150 ns on storage time) make it i
bul45d2r.pdf
Order this documentMOTOROLAby BUL45D2/DSEMICONDUCTOR TECHNICAL DATABUL45D2Designer's Data SheetPOWER TRANSISTORS5 AMPERESHigh Speed, High Gain Bipolar700 VOLTSNPN Power Transistor with75 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe BUL45D2 is stateofart High Speed High gain BIPolar transistor (H2BIP).High dynamic
bul45d2-d.pdf
BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturationhttp://onsemi.comNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lotminimum spread (150 ns on storage time) make it ideally suitable fo
bul45rev.pdf
Order this documentMOTOROLAby BUL45/DSEMICONDUCTOR TECHNICAL DATABUL45 *Designer's Data SheetBUL45F*NPN Silicon Power Transistor*Motorola Preferred DeviceHigh Voltage SWITCHMODEt SeriesPOWER TRANSISTOR5.0 AMPERESDesigned for use in electronic ballast (light ballast) and in Switchmode Power700 VOLTSsupplies up to 50 Watts. Main features include:35 and 75 WATTS
bul45g.pdf
BUL45GNPN Silicon PowerTransistorHigh Voltage SWITCHMODEt SeriesDesigned for use in electronic ballast (light ballast) and inhttp://onsemi.comSwitchmode Power supplies up to 50 Watts.Features POWER TRANSISTOR5.0 AMPERES, 700 VOLTS, Improved Efficiency Due to:35 AND 75 WATTS Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On-Stat
bul45.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL45 DESCRIPTION With TO-220C package Fast switching speed High voltage APPLICATIONS Designed for use in electronic ballast and In switchmode power supplies PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: PZT4403 | MPS6734 | FJE5304D | EMZ2 | 3DK102
History: PZT4403 | MPS6734 | FJE5304D | EMZ2 | 3DK102
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050