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BUL45D2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUL45D2G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 13 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 22
   Paquete / Cubierta: TO220
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BUL45D2G Datasheet (PDF)

 ..1. Size:361K  onsemi
bul45d2g.pdf pdf_icon

BUL45D2G

BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodewww.onsemi.comand Built-in Efficient AntisaturationNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lot700 VOLTS, 75 WATTSminimum spread (150 ns on storage time) make it i

 7.1. Size:444K  motorola
bul45d2r.pdf pdf_icon

BUL45D2G

Order this documentMOTOROLAby BUL45D2/DSEMICONDUCTOR TECHNICAL DATABUL45D2Designer's Data SheetPOWER TRANSISTORS5 AMPERESHigh Speed, High Gain Bipolar700 VOLTSNPN Power Transistor with75 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe BUL45D2 is stateofart High Speed High gain BIPolar transistor (H2BIP).High dynamic

 7.2. Size:231K  onsemi
bul45d2-d.pdf pdf_icon

BUL45D2G

BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturationhttp://onsemi.comNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lotminimum spread (150 ns on storage time) make it ideally suitable fo

 9.1. Size:392K  motorola
bul45rev.pdf pdf_icon

BUL45D2G

Order this documentMOTOROLAby BUL45/DSEMICONDUCTOR TECHNICAL DATABUL45 *Designer's Data SheetBUL45F*NPN Silicon Power Transistor*Motorola Preferred DeviceHigh Voltage SWITCHMODEt SeriesPOWER TRANSISTOR5.0 AMPERESDesigned for use in electronic ballast (light ballast) and in Switchmode Power700 VOLTSsupplies up to 50 Watts. Main features include:35 and 75 WATTS

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History: 2SB1204 | BDX83C

 

 
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