BUL45D2G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL45D2G  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 13 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 22

Encapsulados: TO220

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BUL45D2G datasheet

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BUL45D2G

BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode www.onsemi.com and Built-in Efficient Antisaturation Network POWER TRANSISTOR The BUL45D2G is state-of-art High Speed High gain BiPolar 5.0 AMPERES, transistor (H2BIP). High dynamic characteristics and lot-to-lot 700 VOLTS, 75 WATTS minimum spread ( 150 ns on storage time) make it i

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BUL45D2G

Order this document MOTOROLA by BUL45D2/D SEMICONDUCTOR TECHNICAL DATA BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES High Speed, High Gain Bipolar 700 VOLTS NPN Power Transistor with 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL45D2 is state of art High Speed High gain BIPolar transistor (H2BIP). High dynamic

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BUL45D2G

BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation http //onsemi.com Network POWER TRANSISTOR The BUL45D2G is state-of-art High Speed High gain BiPolar 5.0 AMPERES, transistor (H2BIP). High dynamic characteristics and lot-to-lot minimum spread ( 150 ns on storage time) make it ideally suitable fo

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BUL45D2G

MOSTRAR MÁS

Otros transistores... BUL123S, BUL128D, BUL128D-B, BUL128DR7, BUL128DR8, BUL129D, BUL3P5, BUL416T, 2SC2073, BUL49DFP, BUL64A, BUL64B, BUL65A, BUL65B, BUL66A, BUL66B, BUL68A