BUL45D2G Datasheet. Specs and Replacement
Type Designator: BUL45D2G 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 13 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 22
Package: TO220
BUL45D2G Substitution
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BUL45D2G datasheet
BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode www.onsemi.com and Built-in Efficient Antisaturation Network POWER TRANSISTOR The BUL45D2G is state-of-art High Speed High gain BiPolar 5.0 AMPERES, transistor (H2BIP). High dynamic characteristics and lot-to-lot 700 VOLTS, 75 WATTS minimum spread ( 150 ns on storage time) make it i... See More ⇒
Order this document MOTOROLA by BUL45D2/D SEMICONDUCTOR TECHNICAL DATA BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES High Speed, High Gain Bipolar 700 VOLTS NPN Power Transistor with 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL45D2 is state of art High Speed High gain BIPolar transistor (H2BIP). High dynamic... See More ⇒
BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation http //onsemi.com Network POWER TRANSISTOR The BUL45D2G is state-of-art High Speed High gain BiPolar 5.0 AMPERES, transistor (H2BIP). High dynamic characteristics and lot-to-lot minimum spread ( 150 ns on storage time) make it ideally suitable fo... See More ⇒
Detailed specifications: BUL123S, BUL128D, BUL128D-B, BUL128DR7, BUL128DR8, BUL129D, BUL3P5, BUL416T, 2SC2073, BUL49DFP, BUL64A, BUL64B, BUL65A, BUL65B, BUL66A, BUL66B, BUL68A
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