All Transistors. BUL45D2G Datasheet

 

BUL45D2G Datasheet and Replacement


   Type Designator: BUL45D2G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 13 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 22
   Noise Figure, dB: -
   Package: TO220
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BUL45D2G Datasheet (PDF)

 ..1. Size:361K  onsemi
bul45d2g.pdf pdf_icon

BUL45D2G

BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodewww.onsemi.comand Built-in Efficient AntisaturationNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lot700 VOLTS, 75 WATTSminimum spread (150 ns on storage time) make it i

 7.1. Size:444K  motorola
bul45d2r.pdf pdf_icon

BUL45D2G

Order this documentMOTOROLAby BUL45D2/DSEMICONDUCTOR TECHNICAL DATABUL45D2Designer's Data SheetPOWER TRANSISTORS5 AMPERESHigh Speed, High Gain Bipolar700 VOLTSNPN Power Transistor with75 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe BUL45D2 is stateofart High Speed High gain BIPolar transistor (H2BIP).High dynamic

 7.2. Size:231K  onsemi
bul45d2-d.pdf pdf_icon

BUL45D2G

BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturationhttp://onsemi.comNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lotminimum spread (150 ns on storage time) make it ideally suitable fo

 9.1. Size:392K  motorola
bul45rev.pdf pdf_icon

BUL45D2G

Order this documentMOTOROLAby BUL45/DSEMICONDUCTOR TECHNICAL DATABUL45 *Designer's Data SheetBUL45F*NPN Silicon Power Transistor*Motorola Preferred DeviceHigh Voltage SWITCHMODEt SeriesPOWER TRANSISTOR5.0 AMPERESDesigned for use in electronic ballast (light ballast) and in Switchmode Power700 VOLTSsupplies up to 50 Watts. Main features include:35 and 75 WATTS

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ZXTN19060CG | NSS60600 | BLX20 | MMBT3416L | ED1801N | STX83003 | BD612

Keywords - BUL45D2G transistor datasheet

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