All Transistors. BUL45D2G Datasheet

 

BUL45D2G Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUL45D2G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 13 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 22
   Noise Figure, dB: -
   Package: TO220

 BUL45D2G Transistor Equivalent Substitute - Cross-Reference Search

   

BUL45D2G Datasheet (PDF)

 ..1. Size:361K  onsemi
bul45d2g.pdf

BUL45D2G BUL45D2G

BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodewww.onsemi.comand Built-in Efficient AntisaturationNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lot700 VOLTS, 75 WATTSminimum spread (150 ns on storage time) make it i

 7.1. Size:444K  motorola
bul45d2r.pdf

BUL45D2G BUL45D2G

Order this documentMOTOROLAby BUL45D2/DSEMICONDUCTOR TECHNICAL DATABUL45D2Designer's Data SheetPOWER TRANSISTORS5 AMPERESHigh Speed, High Gain Bipolar700 VOLTSNPN Power Transisto

 7.2. Size:231K  onsemi
bul45d2-d.pdf

BUL45D2G BUL45D2G

BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturationhttp://onsemi.comNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lotminimum spread (150 ns on storage time) make it ideally suitable fo

 9.1. Size:392K  motorola
bul45rev.pdf

BUL45D2G BUL45D2G

Order this documentMOTOROLAby BUL45/DSEMICONDUCTOR TECHNICAL DATABUL45 *Designer's Data SheetBUL45F*NPN Silicon Power Transistor*Motorola Preferred DeviceHigh Voltage SWITCHMODEt S

 9.2. Size:205K  onsemi
bul45g.pdf

BUL45D2G BUL45D2G

BUL45GNPN Silicon PowerTransistorHigh Voltage SWITCHMODEt SeriesDesigned for use in electronic ballast (light ballast) and inhttp://onsemi.comSwitchmode Power supplies up to 50 Watts.Features POWER TRANSISTOR5.0 AMPERES, 700 VOLTS, Improved Efficiency Due to:35 AND 75 WATTS Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On-Stat

 9.3. Size:119K  inchange semiconductor
bul45.pdf

BUL45D2G BUL45D2G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL45 DESCRIPTION With TO-220C package Fast switching speed High voltage APPLICATIONS Designed for use in electronic ballast and In switchmode power supplies PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top