BUL65B Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL65B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO251
Búsqueda de reemplazo de BUL65B
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BUL65B datasheet
bul65b.pdf
BUL65B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND
bul654.pdf
BUL654 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATIONS ELECTRONIC TRANSFORMER FOR 3 2 HALOGEN LAMPS 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL654 is manufactured us
bul65a.pdf
BUL65A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND
Otros transistores... BUL129D , BUL3P5 , BUL416T , BUL45D2G , BUL49DFP , BUL64A , BUL64B , BUL65A , 2SC4793 , BUL66A , BUL66B , BUL68A , BUL68B , BUL70A , BUL72A , BUL72B , BUL52ASMD .
History: KSY63
History: KSY63
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