BUL65B Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL65B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO251
BUL65B Transistor Equivalent Substitute - Cross-Reference Search
BUL65B Datasheet (PDF)
bul65b.pdf
BUL65BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND
bul654.pdf
BUL654HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORPRELIMINARY DATA HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oCAPPLICATIONS ELECTRONIC TRANSFORMER FOR 32HALOGEN LAMPS1 SWITCH MODE POWER SUPPLIES TO-220DESCRIPTION The BUL654 is manufactured us
bul65a.pdf
BUL65ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: M28M
