BUL68B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUL68B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 44 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de transistor bipolar BUL68B

BUL68B Datasheet (PDF)

..1. Size:14K semelab
bul68b.pdf

BUL68BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND

9.1. Size:14K semelab
bul68a.pdf

BUL68ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND

9.2. Size:84K jmnic
bul6825.pdf

Product Specification www.jmnic.com Silicon Power Transistors BUL6825 DESCRIPTION High voltage ,high speed With TO-220C package APPLICATIONS Relay drivers Inverters Switching regulators Deflection circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterLIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

9.3. Size:312K sisemi
bul6823.pdf

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL / BUL SERIES TRANSISTORS BUL6823NPN BUL / BUL SERIES TRANSISTORS BUL6823N

9.4. Size:312K sisemi
bul6821.pdf

9.5. Size:385K sisemi
bul6802.pdf

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL /BUL SERIES TRANSISTORS BUL6802NPN BUL /BUL SERIES TRANSISTORS BUL6802NPN

9.6. Size:263K sisemi
bul68h5t.pdf

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE /MJE SERIES TRANSISTORS BUL68H5TMJE /MJE SERIES TRANSISTORS BUL68H5TMJE /MJE

9.7. Size:312K sisemi
bul6823a.pdf

9.8. Size:312K sisemi
bul6822.pdf

9.9. Size:312K sisemi
bul6822a.pdf

9.10. Size:215K inchange semiconductor
bul6825.pdf

isc Silicon NPN Power Transistor BUL6825DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.5V(Max) @ I = 1ACE(sat) CHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in relay drivers ,inverters ,s

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BDS18 | L2SA2029RM3T5G

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050