Биполярный транзистор BUL68B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUL68B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Ёмкость коллекторного перехода (Cc): 44 pf
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO251
BUL68B Datasheet (PDF)
bul68b.pdf
BUL68BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND
bul68a.pdf
BUL68ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND
bul6825.pdf
Product Specification www.jmnic.com Silicon Power Transistors BUL6825 DESCRIPTION High voltage ,high speed With TO-220C package APPLICATIONS Relay drivers Inverters Switching regulators Deflection circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterLIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co
bul6823.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL / BUL SERIES TRANSISTORS BUL6823NPN BUL / BUL SERIES TRANSISTORS BUL6823N
bul6821.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL / BUL SERIES TRANSISTORS BUL6821NPN BUL / BUL SERIES TRANSISTORS BUL6821N
bul6802.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL /BUL SERIES TRANSISTORS BUL6802NPN BUL /BUL SERIES TRANSISTORS BUL6802NPN
bul68h5t.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE /MJE SERIES TRANSISTORS BUL68H5TMJE /MJE SERIES TRANSISTORS BUL68H5TMJE /MJE
bul6823a.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL / BUL SERIES TRANSISTORS BUL6823ANPN BUL / BUL SERIES TRANSISTORS BUL6823A
bul6822.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL / BUL SERIES TRANSISTORS BUL6822NPN BUL / BUL SERIES TRANSISTORS BUL6822N
bul6822a.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN BUL / BUL SERIES TRANSISTORS BUL6822ANPN BUL / BUL SERIES TRANSISTORS BUL6822A
bul6825.pdf
isc Silicon NPN Power Transistor BUL6825DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.5V(Max) @ I = 1ACE(sat) CHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in relay drivers ,inverters ,s
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050