BUL70A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUL70A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 3 W
   Tensión colector-base (Vcb): 1000 V
   Tensión colector-emisor (Vce): 500 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT223

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BUL70A Datasheet (PDF)

..1. Size:14K semelab
bul70a.pdf

BUL70ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE0.320.24HIGH SPEED NPNSILICON POWER TRANSISTOR0.100.021613max.Designed for use in 1.70electronic ballast applicationsmax.10max. SEMEFAB DESIGNED AND DIFFUSED DIE6.76.33.1 HIGH VOLTAGE2.9 FAST SWITCHING4 HIGH ENERGY RATING3.7 7.3

9.1. Size:271K st
bul705.pdf

BUL705High voltage fast-switching NPN Power TransistorGeneral features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 Fully characterized at 125 C21 In compliance with the 2002/93/EC European TO-220DirectiveDescriptionThe device is manufactu

9.2. Size:263K st
bul704.pdf

BUL704High voltage fast-switching NPN Power TransistorGeneral features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European 21DirectiveTO-220DescriptionThe device is manufactured using high voltageMulti-Epitax

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BDS11 | 2SB904 | PN835 | 2SA1380C | AC117R | AC142-6 | MMBT2484

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050