BUL70A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL70A  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 3 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT223

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BUL70A datasheet

 ..1. Size:14K  semelab
 bul70a.pdf pdf_icon

BUL70A

BUL70A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16 13 max. Designed for use in 1.70 electronic ballast applications max. 10 max. SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 HIGH VOLTAGE 2.9 FAST SWITCHING 4 HIGH ENERGY RATING 3.7 7.3

 9.1. Size:271K  st
 bul705.pdf pdf_icon

BUL70A

BUL705 High voltage fast-switching NPN Power Transistor General features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Fully characterized at 125 C 2 1 In compliance with the 2002/93/EC European TO-220 Directive Description The device is manufactu

 9.2. Size:263K  st
 bul704.pdf pdf_icon

BUL70A

BUL704 High voltage fast-switching NPN Power Transistor General features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European 2 1 Directive TO-220 Description The device is manufactured using high voltage Multi-Epitax

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