BUL70A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL70A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT223
BUL70A Transistor Equivalent Substitute - Cross-Reference Search
BUL70A Datasheet (PDF)
bul70a.pdf
BUL70ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE0.320.24HIGH SPEED NPNSILICON POWER TRANSISTOR0.100.021613max.Designed for use in 1.70electronic ballast applicationsmax.10max. SEMEFAB DESIGNED AND DIFFUSED DIE6.76.33.1 HIGH VOLTAGE2.9 FAST SWITCHING4 HIGH ENERGY RATING3.7 7.3
bul705.pdf
BUL705High voltage fast-switching NPN Power TransistorGeneral features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 Fully characterized at 125 C21 In compliance with the 2002/93/EC European TO-220DirectiveDescriptionThe device is manufactu
bul704.pdf
BUL704High voltage fast-switching NPN Power TransistorGeneral features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European 21DirectiveTO-220DescriptionThe device is manufactured using high voltageMulti-Epitax
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
