BUL70A Datasheet. Specs and Replacement

Type Designator: BUL70A  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SOT223

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BUL70A datasheet

 ..1. Size:14K  semelab

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BUL70A

BUL70A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16 13 max. Designed for use in 1.70 electronic ballast applications max. 10 max. SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 HIGH VOLTAGE 2.9 FAST SWITCHING 4 HIGH ENERGY RATING 3.7 7.3... See More ⇒

 9.1. Size:271K  st

bul705.pdf pdf_icon

BUL70A

BUL705 High voltage fast-switching NPN Power Transistor General features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Fully characterized at 125 C 2 1 In compliance with the 2002/93/EC European TO-220 Directive Description The device is manufactu... See More ⇒

 9.2. Size:263K  st

bul704.pdf pdf_icon

BUL70A

BUL704 High voltage fast-switching NPN Power Transistor General features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European 2 1 Directive TO-220 Description The device is manufactured using high voltage Multi-Epitax... See More ⇒

Detailed specifications: BUL64A, BUL64B, BUL65A, BUL65B, BUL66A, BUL66B, BUL68A, BUL68B, B772, BUL72A, BUL72B, BUL52ASMD, BUL52BSMD, BUL53ASMD, BUL53B-SM, BUL53BSMD, BUL54A-SM

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