BUL72A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUL72A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 350 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de transistor bipolar BUL72A

BUL72A Datasheet (PDF)

..1. Size:14K semelab
bul72a.pdf

BUL72ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE0.320.24HIGH SPEED NPNSILICON POWER TRANSISTOR0.100.021613max.Designed for use in 1.70electronic ballast applicationsmax.10max. SEMEFAB DESIGNED AND DIFFUSED DIE6.76.33.1 HIGH VOLTAGE2.9 FAST SWITCHING4 HIGH ENERGY RATING3.7 7.3

9.1. Size:200K st
bulb7216 bul7216.pdf

BULB7216BUL7216High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation3231 Very high switching speed21I2PAKTO-220Applications Electronic ballast for fluorescent lighting (277 V 31push-pull and 347 V half bridge topoligies)D2PAKDes

9.2. Size:14K semelab
bul72b.pdf

BUL72BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE0.320.24HIGH SPEED NPNSILICON POWER TRANSISTOR0.100.021613max.Designed for use in 1.70electronic ballast applicationsmax.10max. SEMEFAB DESIGNED AND DIFFUSED DIE6.76.33.1 HIGH VOLTAGE2.9 FAST SWITCHING4 HIGH ENERGY RATING3.7 7.3

9.3. Size:16K semelab
bul72b lcc4.pdf

BUL72B - LCC4SEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPNSILICON POWER TRANSISTOR9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 17 SEMEFAB DESIGNED AND DIFFUSED DIE10 187.62 (0.300)7.12 (0.280)9 1 HIGH VOLTAGE0.76 (0.030)8 20.51

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BSX27 | 2N1383Y

Liste

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