All Transistors. BUL72A Datasheet

 

BUL72A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUL72A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT223

 BUL72A Transistor Equivalent Substitute - Cross-Reference Search

   

BUL72A Datasheet (PDF)

 ..1. Size:14K  semelab
bul72a.pdf

BUL72A
BUL72A

BUL72ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE0.320.24HIGH SPEED NPNSILICON POWER TRANSISTOR0.100.021613max.Designed for use in 1.70electronic ballast applicationsmax.10max. SEMEFAB DESIGNED AND DIFFUSED DIE6.76.33.1 HIGH VOLTAGE2.9 FAST SWITCHING4 HIGH ENERGY RATING3.7 7.3

 9.1. Size:200K  st
bulb7216 bul7216.pdf

BUL72A
BUL72A

BULB7216BUL7216High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation3231 Very high switching speed21I2PAKTO-220Applications Electronic ballast for fluorescent lighting (277 V 31push-pull and 347 V half bridge topoligies)D2PAKDes

 9.2. Size:14K  semelab
bul72b.pdf

BUL72A
BUL72A

BUL72BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE0.320.24HIGH SPEED NPNSILICON POWER TRANSISTOR0.100.021613max.Designed for use in 1.70electronic ballast applicationsmax.10max. SEMEFAB DESIGNED AND DIFFUSED DIE6.76.33.1 HIGH VOLTAGE2.9 FAST SWITCHING4 HIGH ENERGY RATING3.7 7.3

 9.3. Size:16K  semelab
bul72b lcc4.pdf

BUL72A
BUL72A

BUL72B - LCC4SEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPNSILICON POWER TRANSISTOR9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 17 SEMEFAB DESIGNED AND DIFFUSED DIE10 187.62 (0.300)7.12 (0.280)9 1 HIGH VOLTAGE0.76 (0.030)8 20.51

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N5226

 

 
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