BUL53ASMD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL53ASMD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-emisor (Vce): 300 V
Corriente del colector DC máxima (Ic): 10 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO276AB
Búsqueda de reemplazo de transistor bipolar BUL53ASMD
BUL53ASMD Datasheet (PDF)
bul53asmd.pdf
BUL53ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
bul53b-sm.pdf
BUL53BSMSEMELABADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE11.52.0 RANGE0.253.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf
bul53bsmd.pdf
BUL53BSMDADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNDimensions in mmHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURERANGE SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
