BUL56ASMD Datasheet. Equivalente

 ..1. Size:10K  semelab
 bul56asmd.pdf

BUL56ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 160V IC = 16A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26

 9.1. Size:20K  semelab
 bul56bsmd.pdf

BUL56BSMD NPN MECHANICAL DATA FAST SWITCHING Dimensions in mm TRANSISTOR FEATURES LOW SATURATION VOLTAGE ULTRA FAST TURN ON AND TURN OFF SWITCHING (tr / tf = 40ns) APPLICATIONS High speed TO220 transistor suited for low voltage a

 9.2. Size:81K  jmnic
 bul56b.pdf

Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT V

 9.3. Size:215K  inchange semiconductor
 bul56b.pdf

isc Silicon NPN Power Transistor BUL56B DESCRIPTION Collector Emitter Sustaining Voltage V = 100V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.2V(Max) @ I = 1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATING