BUL56ASMD Datasheet and Replacement

BUL56ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 160V IC = 16A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

BUL56BSMDNPNMECHANICAL DATAFAST SWITCHINGDimensions in mmTRANSISTOR FEATURES LOW SATURATION VOLTAGE ULTRA FAST TURNON AND TURNOFFSWITCHING (tr / tf = 40ns) APPLICATIONS High speed TO220 transistor suited for low voltage a

Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterLIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNITV

isc Silicon NPN Power Transistor BUL56BDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 100V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.2V(Max) @ I = 1ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in electronic ballast applications.ABSOLUTE MAXIMUM RATING