2N6653 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N6653Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

isc Silicon NPN Power Transistor 2N6653DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta

2N6659, 2N6659-2www.vishay.comVishay SiliconixN-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 35 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 1.8 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205ADBENEFITS(TO-39) Guarant

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N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X Switching Regulators Converters Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage 20V ID TC = 25C Drain Current 1.4A ID TC = 100C Drain Current 1.0A IDM1 Pulsed Drain Current 3A PD TC = 25C Power Dissipation 6.25W

2N6654Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 350V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N6659MECHANICAL DATADimensions in mm (inches)NCHANNEL8.89 (0.35)ENHANCEMENT MODE9.40 (0.37)7.75 (0.305)8.51 (0.335)MOS TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.8.51 (0.335) Switching Regulatorsdia. Converters5.08 (0.200)typ. Motor Drivers2.542(0.100)1 30.66 (0.026)1.14 (0.045

2N6655Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

isc Silicon NPN Power Transistor 2N6654DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta