KC807 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KC807 📄📄

Código: 5A_5B_5C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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KC807 datasheet

..1. Size:40K kexin
kc807.pdf pdf_icon

SMD Type Transistors PNP Silicon AF Transistors KC807(BC807) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features For general AF applications. 12 +0.1 +0.05 0.95-0.1 0.1-0.01 High collector current. +0.1 1.9-0.1 High current gain. Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

0.1. Size:519K kexin
kc807a.pdf pdf_icon

SMD Type Transistors SMD Type PNP Transistors BC807A (KC807A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features For general AF applications. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 High collector current. +0.1 1.9 -0.1 High current gain. Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

0.2. Size:922K kexin
kc807w.pdf pdf_icon

SMD Type Transistors PNP Transistors BC807W (KC807W) Features Ldeally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -5

Otros transistores... KA4L4L, KA4L4M, KA4L4Z, KC327, KC337, KC556, KC557, KC558, MJE350, KC807A, KC807W, KC808, KC808A, KC817-16, KC817-25, KC817-40, KC817A-16

KC807 Datasheet. Equivalente