KC807 Datasheet. Specs and Replacement
Type Designator: KC807 📄📄
SMD Transistor Code: 5A_5B_5C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT23
KC807 Substitution
- BJT ⓘ Cross-Reference Search
KC807 datasheet
SMD Type Transistors PNP Silicon AF Transistors KC807(BC807) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features For general AF applications. 12 +0.1 +0.05 0.95-0.1 0.1-0.01 High collector current. +0.1 1.9-0.1 High current gain. Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect... See More ⇒
SMD Type Transistors SMD Type PNP Transistors BC807A (KC807A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features For general AF applications. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 High collector current. +0.1 1.9 -0.1 High current gain. Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒
SMD Type Transistors PNP Transistors BC807W (KC807W) Features Ldeally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -5 ... See More ⇒
Detailed specifications: KA4L4L, KA4L4M, KA4L4Z, KC327, KC337, KC556, KC557, KC558, MJE350, KC807A, KC807W, KC808, KC808A, KC817-16, KC817-25, KC817-40, KC817A-16
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