2N6653-3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N6653 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol

isc Silicon NPN Power Transistor 2N6653 DESCRIPTION High Voltage Capability High Current Current Capability Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for use in switching and linear applications in military and power conversion. Absolute maximum ratings(Ta