KC858 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KC858  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 125

Encapsulados: SOT23

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KC858 datasheet

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 kc856 kc857 kc858.pdf pdf_icon

KC858

SMD Type Transistors PNP Transistors BC856 BC858 (KC856 KC858) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856 BC857 BC858 Unit C

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 kc856w kc857w kc858w.pdf pdf_icon

KC858

SMD Type Transistors PNP Transistors BC856W,BC857W,BC858W (KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC856W -80 Collector - Base Voltage BC857W VCBO -50 BC858W -30 BC856W -65 V Collector - Emitte

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 kc856a kc856b kc857a kc857b kc857c kc858a kc858b kc858c.pdf pdf_icon

KC858

SMD Type Transistors PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

Otros transistores... KC856W, KC857, KC857A, KC857B, KC857C, KC857S, KC857T, KC857W, 2SC828, KC858A, KC858B, KC858C, KC858W, KC859, KC859W, KC860, KC860W