RN1116F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1116F
Código: XT
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: SOT490
SC81 ESM
Búsqueda de reemplazo de RN1116F
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RN1116F datasheet
8.1. Size:174K toshiba
rn1114mfv rn1115mfv rn1116mfv rn1117mfv rn1118mfv.pdf 
RN1114MFV RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Unit mm Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.80 0.05 Simplify circuit design Reduce a quantity of parts and manufac
9.1. Size:237K toshiba
rn1110act rn1111act.pdf
RN1110ACT, RN1111ACT NPN (PCT ) ( ) RN1110ACT,RN1111ACT mm 0.6 0.05 0.5 0.03 (CST3)
9.2. Size:106K toshiba
rn1110 rn1111 sot416.pdf
RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110 RN2111 Equivalent Circuit Maximum Ratings (Ta = 25 C) JEDEC
9.3. Size:207K toshiba
rn1114 rn1118.pdf
RN1114 RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2114 to 2118 Equivalent Circuit a
9.4. Size:321K toshiba
rn1110mfv rn1111mfv.pdf
RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit mm 1.2 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 Incorporating a bias resistor into the transistor reduces the numb
9.5. Size:281K toshiba
rn1110f rn1111f.pdf
RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Absolute Maximum Ratings (Ta
9.6. Size:154K toshiba
rn1112ct rn1113ct.pdf
RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en
9.7. Size:130K toshiba
rn1110fs rn1111fs.pdf
RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm JEDEC Incorporating a bias resistor into a transistor reduces parts count. JEITA Reducing the parts count enables the manufacture of ever more TOSH
9.8. Size:160K toshiba
rn1114-rn1118.pdf
RN1114 RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114 2118 Equivalent Circuit and Bias Resistor
9.9. Size:152K toshiba
rn1119mfv.pdf
RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1119MFV Switching Applications Unit mm Inverter Circuit Applications 1.2 0.05 Interface Circuit Applications 0.8 0.05 Driver Circuit Applications 1 With built-in bias resistors 2 3 Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2119MFV
9.10. Size:108K toshiba
rn1112 rn1113.pdf
RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112,RN1113 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112, RN2113 Equivalent Circuit Maximum Ratings (Ta = 25 C) Char
9.11. Size:121K toshiba
rn1110ft rn1111ft .pdf
RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.
9.12. Size:209K toshiba
rn1114f rn1118f.pdf
RN1114F RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114F to 2118F Equivalent Circuit and Bi
9.13. Size:286K toshiba
rn1112mfv rn1113mfv.pdf
RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV Unit mm Switching, Inverter Circuit, Interface Circuit and 1.2 0.05 Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduces the num
9.14. Size:187K toshiba
rn1114ft rn1118ft.pdf
RN1114FT RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN2114F
9.15. Size:105K toshiba
rn1110f rn1111f sot490.pdf
RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Maximum Ratings (Ta = 25 C)
9.16. Size:311K toshiba
rn1110 rn1111.pdf
RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110, RN1111 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2110 and RN2111
9.17. Size:272K toshiba
rn1112 rn1113 .pdf
RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112, RN1113 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified process Complementary to RN2112 and RN2113 Equivalent Circuit Absolute Maximum Ratings (Ta = 25
9.18. Size:154K toshiba
rn1112act rn1113act.pdf
RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts, which enab
9.20. Size:130K toshiba
rn1112fs rn1113fs.pdf
RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe
9.21. Size:154K toshiba
rn1110ct rn1111ct.pdf
RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count e
9.22. Size:124K toshiba
rn1112ft rn1113ft.pdf
RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.
Otros transistores... KC858A, KC858B, KC858C, KC858W, KC859, KC859W, KC860, KC860W, A42, RN1114FT, RN1115FT, KCP51, KCP52, KCP53, KCP53-16, KCP54, KCP55
