RN1116F. Аналоги и основные параметры
Наименование производителя: RN1116F
Маркировка: XT
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.47
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: SOT490
SC81 ESM
Аналоги (замена) для RN1116F
- подборⓘ биполярного транзистора по параметрам
RN1116F даташит
8.1. Size:174K toshiba
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9.1. Size:237K toshiba
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9.4. Size:321K toshiba
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9.6. Size:154K toshiba
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9.9. Size:152K toshiba
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9.10. Size:108K toshiba
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9.12. Size:209K toshiba
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9.15. Size:105K toshiba
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9.22. Size:124K toshiba
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Другие транзисторы: KC858A, KC858B, KC858C, KC858W, KC859, KC859W, KC860, KC860W, A42, RN1114FT, RN1115FT, KCP51, KCP52, KCP53, KCP53-16, KCP54, KCP55
