RN2107F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2107F  📄📄 

Código: YH

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT490 SC81 ESM

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RN2107F datasheet

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RN2107F

RN2107F RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F RN1109F Equivalent Circuit and Bias Resister Valu

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RN2107F

RN2107FS RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip

 0.2. Size:146K  toshiba
 rn2107ft-rn2109ft.pdf pdf_icon

RN2107F

RN2107FT RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p

 0.3. Size:82K  toshiba
 rn2107f-rn2109f.pdf pdf_icon

RN2107F

RN2107F RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107F RN1109F Equivalent Circuit and Bias Resister V

MOSTRAR MÁS

Otros transistores... KCW72, KCW29, KCW30, KCW31, KCW32, KCW33, KCW61, RN1972HFE, BC327, RN2108F, KMBT2222A, KMBT2222AT, KMBT2907, KMBT2907A, KMBT2907AT, KMBT3904, KMBT3904DW