RN2108F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2108F

Código: XI_YI

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 22 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT490 SC81 ESM

 Búsqueda de reemplazo de RN2108F

- Selecciónⓘ de transistores por parámetros

 

RN2108F datasheet

 0.1. Size:162K  toshiba
 rn2107fs rn2108fs rn2109fs.pdf pdf_icon

RN2108F

RN2107FS RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip

 8.1. Size:177K  toshiba
 rn2107 rn2108 rn2109.pdf pdf_icon

RN2108F

RN2107 RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107 RN1109 Equivalent Circuit and Bias Resister Values T

 8.2. Size:194K  toshiba
 rn2107mfv rn2108mfv rn2109mfv.pdf pdf_icon

RN2108F

RN2107MFV RN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.8 0.05 enabling the ma

MOSTRAR MÁS

Otros transistores... KCW29, KCW30, KCW31, KCW32, KCW33, KCW61, RN1972HFE, RN2107F, A733, KMBT2222A, KMBT2222AT, KMBT2907, KMBT2907A, KMBT2907AT, KMBT3904, KMBT3904DW, KMBT3904T