KMBT3906T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KMBT3906T

Código: 3N

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT523

 Búsqueda de reemplazo de KMBT3906T

- Selecciónⓘ de transistores por parámetros

 

KMBT3906T datasheet

 ..1. Size:647K  kexin
 kmbt3906t.pdf pdf_icon

KMBT3906T

SMD Type Transistors PNP Transistors MMBT3906T (KMBT3906T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Epitaxial Planar Die Construction 2 1 Also Available in Lead Free Version Complementary to MMBT3904T 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter S

 6.1. Size:153K  tysemi
 kmbt3906.pdf pdf_icon

KMBT3906T

Product specification KMBT3906(MMBT3906) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Epitaxial planar die construction 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 V C

 6.2. Size:71K  kexin
 kmbt3906.pdf pdf_icon

KMBT3906T

SMD Type Transistors PNP Transistors KMBT3906(MMBT3906) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Epitaxial planar die construction 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -40 V Emitter - Base Volt

 6.3. Size:792K  kexin
 kmbt3906dw.pdf pdf_icon

KMBT3906T

SMD Type Transistors PNP Transistors MMBT3906DW (KMBT3906DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Curren

MOSTRAR MÁS

Otros transistores... KMBT2907, KMBT2907A, KMBT2907AT, KMBT3904, KMBT3904DW, KMBT3904T, KMBT3906, KMBT3906DW, BD135, RN2110F, RN2112F, KMBT4401, KMBT4403, KMBT4403W, KMBT5088, KMBT5089, KMBT5401