RN2110F Todos los transistores

 

RN2110F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2110F
   Código: XK_YK
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT490 SC81 ESM

 Búsqueda de reemplazo de transistor bipolar RN2110F

 

RN2110F Datasheet (PDF)

 0.1. Size:114K  toshiba
rn2110fs rn2111fs.pdf

RN2110F
RN2110F

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a

 0.2. Size:122K  toshiba
rn2110ft-rn2111ft.pdf

RN2110F
RN2110F

RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

 0.3. Size:109K  toshiba
rn2110f-rn2111f.pdf

RN2110F
RN2110F

RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110F, RN1111F Equivalent Circuit Maximum Ratings (Ta = 25C

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top