KMBT5551
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KMBT5551
Código: G1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 180
V
Tensión colector-emisor (Vce): 160
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar KMBT5551
KMBT5551
Datasheet (PDF)
..1. Size:166K tysemi
kmbt5551.pdf 
SMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorSMD Type TProduct specificationKMBT5551(MMBT5551)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Ra
..2. Size:72K kexin
kmbt5551.pdf
SMD Type TransistorsNPN TransistorsKMBT5551(MMBT5551)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 160 V
9.1. Size:140K tysemi
kmbt5401.pdf
SMD Type TransistorsSMD Type TransistorsSMD Type TransistorSMD Type TProduct specificationKMBT5401(MMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-b
9.2. Size:1487K kexin
kmbt5089.pdf
SMD Type TransistorsNPN TransistorsMMBT5089 (KMBT5089)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=25V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V
9.3. Size:935K kexin
kmbt5088.pdf
SMD Type TransistorsNPN TransistorsMMBT5088 (KMBT5088)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=30V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V
9.4. Size:74K kexin
kmbt5401.pdf
SMD Type TransistorsPNP TransistorsKMBT5401(MMBT5401)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -150
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